STP110N8F6 MOSFET N-CH 80V 110A TO220

• Customization: Available
• Conductive Type: Bipolar Integrated Circuit
• Integration: MSI
• Model NO.: STP110N8F6
• Technics: Semiconductor IC
• MFG.: STMICRO
• D/C: 22+
• Package: TO-220
• Quality: Genuine New Original
• shape: hqfp64
• Transport Package: Box
• Origin: China
• HS Code: 8542399000
• Production Capacity: 1000000PCS

Product Description

Description

STP110N8F6: MOSFET N-channel 80 V, 0.0056 Ohm typ 110 A, STripFET F6 Power MOSFET

Mfr. Part#: STP110N8F6

Mfr.: STMICRO

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: ONE YEAR

   

Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	110 A
Rds On - Drain-Source Resistance:	6.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	150 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	200 W
Channel Mode:	Enhancement
Tradename:	STripFET
Series:	STP110N8F6
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	48 ns
Height:	15.75 mm
Length:	10.4 mm
Product Type:	MOSFET
Rise Time:	61 ns
Factory Pack Quantity:	1000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	162 ns
Typical Turn-On Delay Time:	24 ns
Width:	4.6 mm
Unit Weight:	0.068784 oz

Applications • Switching applications


Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages








 

 

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