| Customization: | Available |
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| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | GSI |
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IPD70R360P7S : 650V and 700V CoolMOS N-Channel Power MOSFET
Mfr. Part#: IPD70R360P7S
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3 (TO-252-3) |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 700 V |
| Id - Continuous Drain Current: | 12.5 A |
| Rds On - Drain-Source Resistance: | 300 mOhms |
| Vgs - Gate-Source Voltage: | - 16 V, + 16 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Qg - Gate Charge: | 16.4 nC |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 59.5 W |
| Channel Mode: | Enhancement |
| Tradename: | CoolMOS |
| Series: | CoolMOS P7 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | Infineon Technologies |
| Configuration: | Single |
| Fall Time: | 18 ns |
| Height: | 2.3 mm |
| Length: | 6.5 mm |
| Moisture Sensitive: | Yes |
| Product Type: | MOSFETs |
| Rise Time: | 8 ns |
| Factory Pack Quantity: | 2500 |
| Subcategory: | Transistors |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 100 ns |
| Typical Turn-On Delay Time: | 19 ns |
| Width: | 6.22 mm |
| Part # Aliases: | IPD70R360P7S SP001491634 |
| Unit Weight: | 0.011640 oz |
Potential applications
Recommended for Flyback topologies for example used in Chargers, Adapters, Lighting Applications,etc.
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