STD4NK60ZT4 Trans MOSFET N-CH 600V 4A  N-Channel SuperMesh Power MosFet 4N60

Product Details
Customization: Available
Conductive Type: Bipolar Integrated Circuit
Integration: GSI
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  • STD4NK60ZT4 Trans MOSFET N-CH 600V 4A  N-Channel SuperMesh Power MosFet 4N60
  • STD4NK60ZT4 Trans MOSFET N-CH 600V 4A  N-Channel SuperMesh Power MosFet 4N60
  • STD4NK60ZT4 Trans MOSFET N-CH 600V 4A  N-Channel SuperMesh Power MosFet 4N60
  • STD4NK60ZT4 Trans MOSFET N-CH 600V 4A  N-Channel SuperMesh Power MosFet 4N60
  • STD4NK60ZT4 Trans MOSFET N-CH 600V 4A  N-Channel SuperMesh Power MosFet 4N60
  • STD4NK60ZT4 Trans MOSFET N-CH 600V 4A  N-Channel SuperMesh Power MosFet 4N60
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Basic Info.

Model NO.
STD4NK60ZT4
Operating Temperature
-55℃ - 125℃
Shape
Flat
Technics
Semiconductor IC
MFG.
ST
D/C
23+
Package
DPAK
Quality
Genuine New Original
Product status
Active
Transport Package
Box
Specification
integrated circuit
Origin
China
HS Code
8542399000
Production Capacity
1000000PCS

Packaging & Delivery

Package Size
20.00cm * 20.00cm * 10.00cm
Package Gross Weight
1.000kg

Product Description

description

STD4NK60ZT4 STD4NK60Z Series 600 V 2 Ohm 4 A N-Channel SuperMesh Power MosFet - TO-252

Mfr. Part#: STD4NK60ZT4

Datasheet: STD4NK60ZT4 Trans MOSFET N-CH 600V 4A N-Channel SuperMesh Power MosFet 4N60(e-mail or chat us for PDF file)

ROHS Status: STD4NK60ZT4 Trans MOSFET N-CH 600V 4A N-Channel SuperMesh Power MosFet 4N60

Quality: 100% Original

Warranty: ONE YEAR
 

 
 
Technology: Si
Mounting Style: SMD/SMT
Package / Case: DPAK-3 (TO-252-3)
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 4 A
Rds On - Drain-Source Resistance: 2 Ohms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 26 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 70 W
Channel Mode: Enhancement
Tradename: SuperMESH
Packaging: Reel
Packaging: Cut Tape
Brand: STMicroelectronics
Configuration: Single
Fall Time: 16.5 ns
Forward Transconductance - Min: 3 S
Height: 2.4 mm
Length: 6.6 mm
Product Type: MOSFETs
Rise Time: 9.5 ns
Series: STD4NK60ZT4
Factory Pack Quantity: 2500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 29 ns
Typical Turn-On Delay Time: 12 ns
Width: 6.2 mm
Unit Weight: 0.011640 oz

 

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Applications • Switching applications




STD4NK60ZT4 Trans MOSFET N-CH 600V 4A N-Channel SuperMesh Power MosFet 4N60


STD4NK60ZT4 Trans MOSFET N-CH 600V 4A N-Channel SuperMesh Power MosFet 4N60

STD4NK60ZT4 Trans MOSFET N-CH 600V 4A N-Channel SuperMesh Power MosFet 4N60







 



STD4NK60ZT4 Trans MOSFET N-CH 600V 4A N-Channel SuperMesh Power MosFet 4N60


STD4NK60ZT4 Trans MOSFET N-CH 600V 4A N-Channel SuperMesh Power MosFet 4N60
 


STD4NK60ZT4 Trans MOSFET N-CH 600V 4A N-Channel SuperMesh Power MosFet 4N60

STD4NK60ZT4 Trans MOSFET N-CH 600V 4A N-Channel SuperMesh Power MosFet 4N60


Certificates

STD4NK60ZT4 Trans MOSFET N-CH 600V 4A N-Channel SuperMesh Power MosFet 4N60

STD4NK60ZT4 Trans MOSFET N-CH 600V 4A N-Channel SuperMesh Power MosFet 4N60



Product Packing details

STD4NK60ZT4 Trans MOSFET N-CH 600V 4A N-Channel SuperMesh Power MosFet 4N60

Why choosing us

  • Located in Shenzhen, the electronic market center of China.
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  • 24 Hours service 

 

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