Customization: | Available |
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Conductive Type: | Bipolar Integrated Circuit |
Integration: | GSI |
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STD4NK60ZT4 : STD4NK60Z Series 600 V 2 Ohm 4 A N-Channel SuperMesh Power MosFet - TO-252
Mfr. Part#: STD4NK60ZT4
Datasheet: (e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | DPAK-3 (TO-252-3) |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Id - Continuous Drain Current: | 4 A |
Rds On - Drain-Source Resistance: | 2 Ohms |
Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Qg - Gate Charge: | 26 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 70 W |
Channel Mode: | Enhancement |
Tradename: | SuperMESH |
Packaging: | Reel |
Packaging: | Cut Tape |
Brand: | STMicroelectronics |
Configuration: | Single |
Fall Time: | 16.5 ns |
Forward Transconductance - Min: | 3 S |
Height: | 2.4 mm |
Length: | 6.6 mm |
Product Type: | MOSFETs |
Rise Time: | 9.5 ns |
Series: | STD4NK60ZT4 |
Factory Pack Quantity: | 2500 |
Subcategory: | Transistors |
Transistor Type: | 1 N-Channel |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 29 ns |
Typical Turn-On Delay Time: | 12 ns |
Width: | 6.2 mm |
Unit Weight: | 0.011640 oz |
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