• IRLML6402TRPBF P-CHANNEL 20V 3.7A MOSFET TRANSISTOR
  • IRLML6402TRPBF P-CHANNEL 20V 3.7A MOSFET TRANSISTOR
  • IRLML6402TRPBF P-CHANNEL 20V 3.7A MOSFET TRANSISTOR
  • IRLML6402TRPBF P-CHANNEL 20V 3.7A MOSFET TRANSISTOR
  • IRLML6402TRPBF P-CHANNEL 20V 3.7A MOSFET TRANSISTOR
  • IRLML6402TRPBF P-CHANNEL 20V 3.7A MOSFET TRANSISTOR

IRLML6402TRPBF P-CHANNEL 20V 3.7A MOSFET TRANSISTOR

shape: hqfp64
Conductive Type: Bipolar Integrated Circuit
Integration: MSI
Technics: Semiconductor IC
Application: Standard Generalized Integrated Circuit
Type: Digital / Analog IC
Samples:
US$ 0.25/Piece 1 Piece(Min.Order)
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Customization:
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Basic Info.

Model NO.
IRLML6402TRPBF
MFG.
INFINEON
D/C
22+
Package
SOT23
Quality
Genuine New Original
Transport Package
Box
Origin
China
HS Code
8542399000
Production Capacity
1000000PCS

Product Description

Description

IRLML6402TRPBF: MOSFET P-CH 20V 3.7A SOT23

Mfr. Part#: IRLML6402TRPBF

Mfr.: INFINEON

Datasheet: IRLML6402TRPBF P-CHANNEL 20V 3.7A MOSFET TRANSISTOR(e-mail or chat us for PDF file)

ROHS Status: IRLML6402TRPBF P-CHANNEL 20V 3.7A MOSFET TRANSISTOR

Quality: 100% Original

Warranty: ONE YEAR
 

 

Product Status
Active
 
FET Type
P-Channel
 
Technology
MOSFET (Metal Oxide)
 
Drain to Source Voltage (Vdss)
20 V
 
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta)
 
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
 
Rds On (Max) @ Id, Vgs
65mOhm @ 3.7A, 4.5V
 
Vgs(th) (Max) @ Id
1.2V @ 250µA
 
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 5 V
 
Vgs (Max)
±12V
 
Input Capacitance (Ciss) (Max) @ Vds
633 pF @ 10 V
 
FET Feature
-
 
Power Dissipation (Max)
1.3W (Ta)
 
Operating Temperature
-55°C ~ 150°C (TJ)
 
Mounting Type
Surface Mount
 
Supplier Device Package
Micro3™/SOT-23
 
Package / Case
TO-236-3, SC-59, SOT-23-3
 
Base Product Number
IRLML6402


These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available







IRLML6402TRPBF P-CHANNEL 20V 3.7A MOSFET TRANSISTOR


IRLML6402TRPBF P-CHANNEL 20V 3.7A MOSFET TRANSISTOR


IRLML6402TRPBF P-CHANNEL 20V 3.7A MOSFET TRANSISTOR

IRLML6402TRPBF P-CHANNEL 20V 3.7A MOSFET TRANSISTOR

IRLML6402TRPBF P-CHANNEL 20V 3.7A MOSFET TRANSISTOR

IRLML6402TRPBF P-CHANNEL 20V 3.7A MOSFET TRANSISTOR
IRLML6402TRPBF P-CHANNEL 20V 3.7A MOSFET TRANSISTOR

IRLML6402TRPBF P-CHANNEL 20V 3.7A MOSFET TRANSISTOR



 

Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

Notice:

  1. Product images are for reference only.
  2. You can contact sales person to apply for a better price.
  3.  For more products, Pls do not hesitate to contact our Sales team. 

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Registered Capital
100000 RMB
Plant Area
<100 square meters