FM24CL64B-GTR FRAM 64Kbit Serial-2Wire Interface IC

• Conductive Type: Bipolar Integrated Circuit
• Integration: MSI
• Technics: Semiconductor IC
• MFG.: CYPRESS
• D/C: 22+
• Package: SOIC8
• Model NO.: FM24CL64B-GTR
• Quality: Genuine New Original
• shape: Flat
• Transport Package: Box
• Origin: China
• HS Code: 8542399000
• Production Capacity: 1000000PCS

Product Description

Description

FM24CL64B-GTR : FRAM (Ferroelectric RAM) Memory IC 64Kbit I²C 1 MHz 550 ns 8-SOIC

Mfr. Part#:  FM24CL64B-GTR

Mfr.: OMRON

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: ONE YEAR
 

Product Status	Active
Memory Type	Non-Volatile
Memory Format	FRAM
Technology	FRAM (Ferroelectric RAM)
Memory Size	64Kbit
Memory Organization	8K x 8
Memory Interface	I²C
Clock Frequency	1 MHz
Write Cycle Time - Word, Page	-
Access Time	550 ns
Voltage - Supply	2.7V ~ 3.65V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC
Base Product Number	FM24CL64

The FM24CL64B is a 64-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the FM24CL64B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24CL64B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM24CL64B ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The FM24CL64B provides substantial benefits to users of serial (I2C) EEPROM as a hardware drop-in replacement. The device specifications are guaranteed over an industrial temperature range of -40 ºC to +85 ºC.

 

 

Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

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