• FGH60T65SHD FGH60T65SHD-F155 Transistor IGBT Chip
  • FGH60T65SHD FGH60T65SHD-F155 Transistor IGBT Chip
  • FGH60T65SHD FGH60T65SHD-F155 Transistor IGBT Chip
  • FGH60T65SHD FGH60T65SHD-F155 Transistor IGBT Chip
  • FGH60T65SHD FGH60T65SHD-F155 Transistor IGBT Chip
  • FGH60T65SHD FGH60T65SHD-F155 Transistor IGBT Chip

FGH60T65SHD FGH60T65SHD-F155 Transistor IGBT Chip

shape: SMD
Conductive Type: Unipolar Integrated Circuit
Integration: MSI
Technics: Semiconductor IC
Application: Standard Generalized Integrated Circuit
Type: Digital / Analog IC
Customization:
Diamond Member Since 2018

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Basic Info.

Model NO.
FGH60T65SHD
MFG.
ON
D/C
17+
Package
TO-247
Quality
Genuine New Original
Function
IGBT
Transport Package
Box
Origin
China
HS Code
8542390000
Production Capacity
1000000PCS

Product Description

Description

FGH60T65SHD: Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube

Package: TO-247

Mfr. Part#: FGH60T65SHD

Mfr.: ON
Datasheet: FGH60T65SHD FGH60T65SHD-F155 Transistor IGBT Chip(e-mail or chat us for PDF file)

ROHS Status: FGH60T65SHD FGH60T65SHD-F155 Transistor IGBT Chip

Quality: 100% Original

Warranty: 180 days
 

Using novel field stop IGBT technology, Fairchild's new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Key Features

  • Maximum Junction Temperature : TJ = 175 degree C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 40 A
  • 100% of the parts tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tightened Parameter Distribution
  • RoHS Compliant
 
 
Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 120A
Current - Collector Pulsed (Icm) 180A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 60A
Power - Max 349W
Switching Energy 1.69mJ (on), 630µJ (off)
Input Type Standard
Gate Charge 102nC
Td (on/off) @ 25°C 26ns/87ns
Test Condition 400V, 60A, 6 Ohm, 15V
Reverse Recovery Time (trr) 34.6ns
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 Long Leads

Company Product Line


FGH60T65SHD FGH60T65SHD-F155 Transistor IGBT Chip







 


FGH60T65SHD FGH60T65SHD-F155 Transistor IGBT Chip


FGH60T65SHD FGH60T65SHD-F155 Transistor IGBT Chip

FGH60T65SHD FGH60T65SHD-F155 Transistor IGBT Chip


FGH60T65SHD FGH60T65SHD-F155 Transistor IGBT Chip

FGH60T65SHD FGH60T65SHD-F155 Transistor IGBT Chip


Certificates

FGH60T65SHD FGH60T65SHD-F155 Transistor IGBT Chip

FGH60T65SHD FGH60T65SHD-F155 Transistor IGBT Chip
 



Why choosing us
  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

Notice:

  1. Product images are for reference only.
  2. You can contact sales person to apply for a better price.
  3.  For more products, Pls do not hesitate to contact our Sales team.   

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Diamond Member Since 2018

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Trading Company
Registered Capital
100000 RMB
Plant Area
<100 square meters