ADL5801ACPZ-R7 ADL5801ACPZ ADL5801 RF Wide Band Active Mixer IC semiconductor

Product Details
Customization: Available
Conductive Type: Bipolar Integrated Circuit
Integration: GSI
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  • ADL5801ACPZ-R7 ADL5801ACPZ ADL5801 RF Wide Band Active Mixer IC semiconductor
  • ADL5801ACPZ-R7 ADL5801ACPZ ADL5801 RF Wide Band Active Mixer IC semiconductor
  • ADL5801ACPZ-R7 ADL5801ACPZ ADL5801 RF Wide Band Active Mixer IC semiconductor
  • ADL5801ACPZ-R7 ADL5801ACPZ ADL5801 RF Wide Band Active Mixer IC semiconductor
  • ADL5801ACPZ-R7 ADL5801ACPZ ADL5801 RF Wide Band Active Mixer IC semiconductor
  • ADL5801ACPZ-R7 ADL5801ACPZ ADL5801 RF Wide Band Active Mixer IC semiconductor
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Basic Info.

Model NO.
ADL5801ACPZ-R7
Shape
Flat
Technics
Semiconductor IC
MFG.
ADI
D/C
22+
Package
LFCSP24
Quality
Genuine New Original
Product status
Active
Transport Package
Box
Specification
integrated circuit
Origin
China
HS Code
8542399000
Production Capacity
1000000PCS

Packaging & Delivery

Package Size
20.00cm * 20.00cm * 10.00cm
Package Gross Weight
1.000kg

Product Description

description

ADL5801ACPZ-R7 IC MXR 10MHZ-6GHZ UP/DWN  RF Mixer Wide Band Active Mixer

Mfr. Part#: ADL5801ACPZ-R7

Datasheet: ADL5801ACPZ-R7 ADL5801ACPZ ADL5801 RF Wide Band Active Mixer IC semiconductor(e-mail or chat us for PDF file)

ROHS Status: ADL5801ACPZ-R7 ADL5801ACPZ ADL5801 RF Wide Band Active Mixer IC semiconductor

Quality: 100% Original

Warranty: ONE YEAR
 

 
RF Frequency: 10 MHz to 6 GHz
Conversion Loss - Max: 1.8 dB
NF - Noise Figure: 13.6 dB
LO Frequency: 10 MHz to 6 GHz
IF Frequency: 10 MHz to 600 MHz
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
Mounting Style: SMD/SMT
Package / Case: LFCSP-24
Brand: Analog Devices
Development Kit: ADL5801-EVALZ
Gain: - 7.25 dB
Maximum Operating Frequency: 6 GHz
Moisture Sensitive: Yes
OIP3 - Third Order Intercept: 24 dBm
Operating Supply Current: 130 mA
Operating Supply Voltage: 5 V
P1dB - Compression Point: 9.9 dBm
Packaging: Reel
Packaging: Cut Tape
Product Type: RF Mixer
Series: ADL5801
Factory Pack Quantity: 1500
Subcategory: Wireless & RF Integrated Circuits
Technology: SiGe
Unit Weight: 0.001485 oz
 
 

The ADL5801 uses a high linearity, doubly balanced, active mixer core with integrated LO buffer amplifier to provide high dynamic range frequency conversion from 10 MHz to 6 GHz. The mixer benefits from a proprietary linearization architecture that provides enhanced input IP3 performance when subject to high input levels. A bias adjust feature allows the input linearity, SSB noise figure, and dc current to be optimized using a single control pin. An optional input power detector is provided for adaptive bias control. The high input linearity allows the device to be used in demanding cellular applications where in-band blocking signals may otherwise result in degradation in dynamic performance. The adaptive bias feature allows the part to provide high input IP3 performance when presented with large blocking signals. When blockers are removed, the ADL5801 can automatically bias down to provide low noise figure and low power consumption.

The balanced active mixer arrangement provides superb LO-to-RF and LO-to-IF leakage, typically better than −40 dBm. The IF outputs are designed to provide a typical voltage conversion gain of 7.8 dB when loaded into a 200 Ω load. The broad frequency range of the open-collector IF outputs allows the ADL5801 to be applied as an upconverter for various transmit applications.

The ADL5801 is fabricated using a SiGe high performance IC process. The device is available in a compact 4 mm × 4 mm, 24-lead LFCSP package and operates over a −40°C to +85°C temperature range. An evaluation board is also available.

APPLICATIONS

  • Cellular base station receivers
  • Radio link downconverters
  • Broadband block conversion
  • Instrumentation








ADL5801ACPZ-R7 ADL5801ACPZ ADL5801 RF Wide Band Active Mixer IC semiconductor


ADL5801ACPZ-R7 ADL5801ACPZ ADL5801 RF Wide Band Active Mixer IC semiconductor


ADL5801ACPZ-R7 ADL5801ACPZ ADL5801 RF Wide Band Active Mixer IC semiconductor







 



ADL5801ACPZ-R7 ADL5801ACPZ ADL5801 RF Wide Band Active Mixer IC semiconductor


ADL5801ACPZ-R7 ADL5801ACPZ ADL5801 RF Wide Band Active Mixer IC semiconductor
 


ADL5801ACPZ-R7 ADL5801ACPZ ADL5801 RF Wide Band Active Mixer IC semiconductor

ADL5801ACPZ-R7 ADL5801ACPZ ADL5801 RF Wide Band Active Mixer IC semiconductor


Certificates

ADL5801ACPZ-R7 ADL5801ACPZ ADL5801 RF Wide Band Active Mixer IC semiconductor

ADL5801ACPZ-R7 ADL5801ACPZ ADL5801 RF Wide Band Active Mixer IC semiconductor



Product Packing details

ADL5801ACPZ-R7 ADL5801ACPZ ADL5801 RF Wide Band Active Mixer IC semiconductor

Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
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  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

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