STGD4M65DF2 TRENCH GATE Transistor IGBT Chip

• shape: SMD
• Conductive Type: Unipolar Integrated Circuit
• Integration: ULSI
• Technics: Thin Film IC
• Application: Standard Generalized Integrated Circuit
• Type: Analog IC
• Model NO.: STGD4M65DF2
• MFG.: ST
• D/C: 17+
• Package: DPAK-3
• Quality: Genuine New Original
• Transport Package: Box
• Origin: China
• HS Code: 8542390000
• Production Capacity: 1000000PCS

Product Description

Description

STGD4M65DF2: Trans IGBT Chip N 650V 8A 3-Pin DPAK T/R 

Package:DPAK-3

Mfr. Part#: STGD4M65DF2

Mfr.: ST
Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: 180 days
 

IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss
 

Product Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	8 A
Current - Collector Pulsed (Icm)	16 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 4A
Power - Max	68 W
Switching Energy	40µJ (on), 136µJ (off)
Input Type	Standard
Gate Charge	15.2 nC
Td (on/off) @ 25°C	12ns/86ns
Test Condition	400V, 4A, 47Ohm, 15V
Reverse Recovery Time (trr)	133 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	DPAK
Base Product Number	STGD4

 

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Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

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