| Customization: | Available |
|---|---|
| Conductive Type: | Unipolar Integrated Circuit |
| Integration: | ULSI |
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STGD4M65DF2: Trans IGBT Chip N 650V 8A 3-Pin DPAK T/R
Package:DPAK-3
Mfr. Part#: STGD4M65DF2
Mfr.: ST
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: 180 days
IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss
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Product Status
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Active
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IGBT Type
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Trench Field Stop
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Voltage - Collector Emitter Breakdown (Max)
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650 V
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Current - Collector (Ic) (Max)
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8 A
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Current - Collector Pulsed (Icm)
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16 A
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Vce(on) (Max) @ Vge, Ic
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2.1V @ 15V, 4A
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Power - Max
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68 W
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Switching Energy
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40µJ (on), 136µJ (off)
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Input Type
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Standard
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Gate Charge
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15.2 nC
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Td (on/off) @ 25°C
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12ns/86ns
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Test Condition
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400V, 4A, 47Ohm, 15V
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Reverse Recovery Time (trr)
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133 ns
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Surface Mount
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Package / Case
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TO-252-3, DPak (2 Leads + Tab), SC-63
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Supplier Device Package
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DPAK
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Base Product Number
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STGD4
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Company Product Line
Certificates
Product Packing details
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