DRAM Chip DDR4 SDRAM MT40A256M16GE-083E:B

• shape: SMD
• Conductive Type: Unipolar Integrated Circuit
• Integration: MSI
• Technics: Thin Film IC
• Application: Standard Generalized Integrated Circuit
• Type: Digital / Analog IC
• Model NO.: MT40A256M16GE-083E:B
• MFG.: MICRON
• D/C: 17+
• Package: FBGA-96
• Quality: Genuine New Original
• Transport Package: Box
• Specification: RAW MATERIAL: SILICON
• Origin: China
• HS Code: 8542390000
• Production Capacity: 1000000PCS

Product Description

Description

MT40A256M16GE-083E:B: DRAM Chip DDR4 SDRAM 4G-Bit 256M x 16 1.2V 96-Pin TF-BGA - Trays

Package: FBGA-96

Mfr. Part#: MT40A256M16GE-083E:B

Mfr.:MICRON

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: 180 days
 

Type:	SDRAM - DDR4
Mounting Style:	SMD/SMT
Package / Case:	FBGA-96
Data Bus Width:	16 bit
Organization:	256 M x 16
Memory Size:	4 Gbit
Maximum Clock Frequency:	1.2 GHz
Supply Voltage - Max:	1.26 V
Supply Voltage - Min:	1.14 V
Supply Current - Max:	83 mA
Minimum Operating Temperature:	0 C
Maximum Operating Temperature:	+ 95 C
Series:	MT40A
Packaging:	Tray
Brand:	Micron
Moisture Sensitive:	Yes
Product Type:	DRAM
Factory Pack Quantity:	1020
Subcategory:	Memory & Data Storage

Features • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, -125mV/+250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • TC maximum up to 95°C - 64ms, 8192-cycle refresh up to 85°C - 32ms, 8192-cycle refresh at >85°C to 95°C • 16 internal banks (x4, x8): 4 groups of 4 banks each • 8 internal banks (x16): 2 groups of 4 banks each • 8n-bit prefetch architecture • Programmable data strobe preambles • Data strobe preamble training • Command/Address latency (CAL) • Multipurpose register READ and WRITE capability • Write leveling • Self refresh mode • Low-power auto self refresh (LPASR) • Temperature controlled refresh (TCR) • Fine granularity refresh • Self refresh abort • Maximum power saving • Output driver calibration • Nominal, park, and dynamic on-die termination (ODT) • Data bus inversion (DBI) for data bus • Command/Address (CA) parity • Databus write cyclic redundancy check (CRC) • Per-DRAM addressability • Connectivity test • sPPR and hPPR capability • JEDEC JESD-79-4 compliant
 

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Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

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