Memory Misc circuit FRAM MB85RS64PNF-G-JNE

• shape: SMD
• Conductive Type: Unipolar Integrated Circuit
• Integration: MSI
• Technics: Thin Film IC
• Application: Standard Generalized Integrated Circuit
• Type: Digital / Analog IC
• Model NO.: MB85RS64PNF-G-JNE
• MFG.: FUJITSU
• D/C: 17+
• Package: SOIC-8
• Quality: Genuine New Original
• Transport Package: Box
• Origin: Malaysia
• HS Code: 8542390000
• Production Capacity: 1000000PCS

Product Description

Description

MB85RS64PNF-G-JNE: IC FRAM 64KBIT 20MHZ 8SOP

Package: SOIC-8

Mfr. Part#: MB85RS64PNF-G-JNE

Mfr.: FUJISTU

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: 180 days
 

Mounting Style:	SMD/SMT
Package / Case:	SOP-8
Memory Size:	64 kbit
Interface Type:	SPI
Organization:	8 k x 8
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Packaging:	Tube
Brand:	Fujitsu Semiconductor
Moisture Sensitive:	Yes
Operating Supply Voltage:	3.3 V
Product Type:	FRAM
Factory Pack Quantity:	95
Subcategory:	Memory & Data Storage
Unit Weight:	0.002116 oz

MB85RS64 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS64 adopts the Serial Peripheral Interface (SPI). The MB85RS64 is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS64 can be used for 1012 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RS64 does not take long time to write data like Flash memories or E2PROM, and MB85RS64 takes no wait time.


 

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