| Customization: | Available |
|---|---|
| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | MSI |
|
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IRF3710PBF: N-Channel 100 V 57A (Tc) 200W (Tc) Through Hole TO-220AB
Mfr. Part#: IRF3710PBF
Mfr.: INFINEON
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
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Product Status
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Active
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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100 V
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Current - Continuous Drain (Id) @ 25°C
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57A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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23mOhm @ 28A, 10V
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Vgs(th) (Max) @ Id
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4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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130 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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3130 pF @ 25 V
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FET Feature
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-
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Power Dissipation (Max)
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200W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Through Hole
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Supplier Device Package
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TO-220AB
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Package / Case
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TO-220-3
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Base Product Number
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IRF3710
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Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
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