• IRF5305PBF TRANS MOSFET P-CH 55V 31A TO220AB
  • IRF5305PBF TRANS MOSFET P-CH 55V 31A TO220AB
  • IRF5305PBF TRANS MOSFET P-CH 55V 31A TO220AB
  • IRF5305PBF TRANS MOSFET P-CH 55V 31A TO220AB
  • IRF5305PBF TRANS MOSFET P-CH 55V 31A TO220AB
  • IRF5305PBF TRANS MOSFET P-CH 55V 31A TO220AB

IRF5305PBF TRANS MOSFET P-CH 55V 31A TO220AB

shape: hqfp64
Conductive Type: Bipolar Integrated Circuit
Integration: MSI
Technics: Semiconductor IC
Application: Standard Generalized Integrated Circuit
Type: Digital / Analog IC
Samples:
US$ 0.25/Piece 1 Piece(Min.Order)
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Customization:
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Basic Info.

Model NO.
IRF5305PBF
MFG.
INFINEON
D/C
22+
Package
TO-220
Quality
Genuine New Original
Transport Package
Box
Origin
China
HS Code
8542399000
Production Capacity
1000000PCS

Product Description

Description

IRF5305PBF: Trans MOSFET P-CH Si 55V 31A 3-Pin(3+Tab) TO-220AB Tube

Mfr. Part#: IRF5305PBF

Mfr.: INFINEON

Datasheet: IRF5305PBF TRANS MOSFET P-CH 55V 31A TO220AB(e-mail or chat us for PDF file)

ROHS Status: IRF5305PBF TRANS MOSFET P-CH 55V 31A TO220AB

Quality: 100% Original

Warranty: ONE YEAR

 

Package
Tube
 
Product Status
Active
 
FET Type
P-Channel
 
Technology
MOSFET (Metal Oxide)
 
Drain to Source Voltage (Vdss)
55 V
 
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
 
Drive Voltage (Max Rds On, Min Rds On)
10V
 
Rds On (Max) @ Id, Vgs
60mOhm @ 16A, 10V
 
Vgs(th) (Max) @ Id
4V @ 250µA
 
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V
 
Vgs (Max)
±20V
 
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 25 V
 
FET Feature
-
 
Power Dissipation (Max)
110W (Tc)
 
Operating Temperature
-55°C ~ 175°C (TJ)
 
Mounting Type
Through Hole
 
Supplier Device Package
TO-220AB
 
Package / Case
TO-220-3
 
Base Product Number
IRF5305


 

 

APPLICATION
Application • Power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads • All types of resistive, inductive and capacitive loads • Replaces electromechanical relays, fuses and discrete circuits

 

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry
 












IRF5305PBF TRANS MOSFET P-CH 55V 31A TO220AB


IRF5305PBF TRANS MOSFET P-CH 55V 31A TO220AB


IRF5305PBF TRANS MOSFET P-CH 55V 31A TO220AB

IRF5305PBF TRANS MOSFET P-CH 55V 31A TO220AB

IRF5305PBF TRANS MOSFET P-CH 55V 31A TO220AB

IRF5305PBF TRANS MOSFET P-CH 55V 31A TO220AB
IRF5305PBF TRANS MOSFET P-CH 55V 31A TO220AB

IRF5305PBF TRANS MOSFET P-CH 55V 31A TO220AB



 

Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

Notice:

  1. Product images are for reference only.
  2. You can contact sales person to apply for a better price.
  3.  For more products, Pls do not hesitate to contact our Sales team. 

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Diamond Member Since 2018

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Trading Company
Registered Capital
100000 RMB
Plant Area
<100 square meters