| Customization: | Available |
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| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | GSI |
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IRF4905PBF : Transistor: P-MOSFET, unipolar, -55V, -74A, 200W, TO220AB
Mfr. Part#: IRF4905PBF
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Polarity: | P-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 55 V |
| Id - Continuous Drain Current: | 70 A |
| Rds On - Drain-Source Resistance: | 20 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Qg - Gate Charge: | 180 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 170 W |
| Channel Mode: | Enhancement |
| Packaging: | Tube |
| Configuration: | Single |
| Height: | 15.65 mm |
| Length: | 10 mm |
| Product Type: | MOSFETs |
| Factory Pack Quantity: | 1000 |
| Subcategory: | Transistors |
| Transistor Type: | 1 P-Channel |
| Width: | 4.4 mm |
| Unit Weight: | 0.068784 oz |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry
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