FM25L16B-GTR FRAM 16Kbit Serial-SPI Interface 3.3V Automotive AEC-Q100 IC

• Customization: Available
• Conductive Type: Bipolar Integrated Circuit
• Integration: MSI
• Model NO.: FM25L16B-GTR
• Technics: Semiconductor IC
• MFG.: CYPRESS
• D/C: 22+
• Package: SOIC8
• Quality: Genuine New Original
• shape: Flat
• Transport Package: Box
• Origin: China
• HS Code: 8542399000
• Production Capacity: 1000000PCS

Product Description

Description

FM25L16B-GTR : FRAM (Ferroelectric RAM) Memory IC 16Kbit SPI 20 MHz 8-SOIC

Mfr. Part#:  FM25L16B-GTR

Mfr.: OMRON

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: ONE YEAR
 

Product Status	Active
Memory Type	Non-Volatile
Memory Format	FRAM
Technology	FRAM (Ferroelectric RAM)
Memory Size	16Kbit
Memory Organization	2K x 8
Memory Interface	SPI
Clock Frequency	20 MHz
Write Cycle Time - Word, Page	-
Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC
Base Product Number	FM25L16

The FM25CL64B is a 64-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. Unlike serial flash and EEPROM, the FM25CL64B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM25CL64B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM25CL64B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss. The FM25CL64B provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. The FM25CL64B uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. The device specifications are guaranteed over an industrial temperature range of -40 ºC to +85 ºC.

 

 

Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

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