IRFB3607PBF MOSFET N-CH 75V 80A TO220AB

• Customization: Available
• Conductive Type: Bipolar Integrated Circuit
• Integration: MSI
• Model NO.: IRFB3607PBF
• Technics: Semiconductor IC
• MFG.: INFINEON
• D/C: 22+
• Package: TO-220
• Quality: Genuine New Original
• shape: hqfp64
• Transport Package: Box
• Origin: China
• HS Code: 8542399000
• Production Capacity: 1000000PCS

Product Description

Description

IRFB3607PBF: Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB Tube

Mfr. Part#: IRFB3607PBF

Mfr.: INFINEON

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: ONE YEAR

 

Package	Tube
Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id	4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	84 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3070 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	140W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	IRFB3607

 

Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits

Benefits  Improved Gate, Avalanche and Dynamic dv/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability

 

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features • P-channel • Enhancement mode • Logic level (4.5V rated) • ESD protected • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21

 

Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

Notice:

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2. You can contact sales person to apply for a better price.
3.  For more products, Pls do not hesitate to contact our Sales team.