• IKW25N120T2 IGBT Transistor chip IKW25N120T2FKSA1
  • IKW25N120T2 IGBT Transistor chip IKW25N120T2FKSA1
  • IKW25N120T2 IGBT Transistor chip IKW25N120T2FKSA1
  • IKW25N120T2 IGBT Transistor chip IKW25N120T2FKSA1
  • IKW25N120T2 IGBT Transistor chip IKW25N120T2FKSA1
  • IKW25N120T2 IGBT Transistor chip IKW25N120T2FKSA1

IKW25N120T2 IGBT Transistor chip IKW25N120T2FKSA1

shape: SMD
Conductive Type: Unipolar Integrated Circuit
Integration: ULSI
Technics: Thin Film IC
Application: Standard Generalized Integrated Circuit
Type: Analog IC
Customization:
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Basic Info.

Model NO.
IKW25N120T2
MFG.
INFINEON
D/C
17+
Package
TO-247
Quality
Genuine New Original
Transport Package
Box
Origin
China
HS Code
8542390000
Production Capacity
1000000PCS

Product Description

Description

IKW25N120T2: Trans IGBT Chip N-CH 1.2KV 50A 3-Pin TO-247 Tube

Package: TO-247

Mfr. Part#: IKW25N120T2

Mfr.: INFINEON
Datasheet: IKW25N120T2 IGBT Transistor chip IKW25N120T2FKSA1(e-mail or chat us for PDF file)

ROHS Status: IKW25N120T2 IGBT Transistor chip IKW25N120T2FKSA1

Quality: 100% Original

Warranty: 180 days
 

Product Status
Not For New Designs
 
IGBT Type
Trench
 
Voltage - Collector Emitter Breakdown (Max)
1200 V
 
Current - Collector (Ic) (Max)
50 A
 
Current - Collector Pulsed (Icm)
100 A
 
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 25A
 
Power - Max
349 W
 
Switching Energy
2.9mJ
 
Input Type
Standard
 
Gate Charge
120 nC
 
Td (on/off) @ 25°C
27ns/265ns
 
Test Condition
600V, 25A, 16.4Ohm, 15V
 
Reverse Recovery Time (trr)
195 ns
 
Operating Temperature
-40°C ~ 175°C (TJ)
 
Mounting Type
Through Hole
 
Package / Case
TO-247-3
 
Supplier Device Package
PG-TO247-3-1
 
Base Product Number
IKW25N120

 

Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Key Features

  • Lowest V ce(sat) drop for lower conduction losses
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

IKW25N120T2 IGBT Transistor chip IKW25N120T2FKSA1







 


IKW25N120T2 IGBT Transistor chip IKW25N120T2FKSA1


IKW25N120T2 IGBT Transistor chip IKW25N120T2FKSA1

IKW25N120T2 IGBT Transistor chip IKW25N120T2FKSA1

IKW25N120T2 IGBT Transistor chip IKW25N120T2FKSA1

IKW25N120T2 IGBT Transistor chip IKW25N120T2FKSA1
IKW25N120T2 IGBT Transistor chip IKW25N120T2FKSA1

IKW25N120T2 IGBT Transistor chip IKW25N120T2FKSA1

Why choosing us
  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

Notice:

  1. Product images are for reference only.
  2. You can contact sales person to apply for a better price.
  3.  For more products, Pls do not hesitate to contact our Sales team.   
 

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Diamond Member Since 2018

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Trading Company
Registered Capital
100000 RMB
Plant Area
<100 square meters