• Trans MOSFET N-CH 30V IRF7313TRPBF
  • Trans MOSFET N-CH 30V IRF7313TRPBF
  • Trans MOSFET N-CH 30V IRF7313TRPBF
  • Trans MOSFET N-CH 30V IRF7313TRPBF
  • Trans MOSFET N-CH 30V IRF7313TRPBF
  • Trans MOSFET N-CH 30V IRF7313TRPBF

Trans MOSFET N-CH 30V IRF7313TRPBF

shape: SMD
Conductive Type: Unipolar Integrated Circuit
Integration: ULSI
Technics: Thin Film IC
Application: Standard Generalized Integrated Circuit
Type: Analog IC
Customization:
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Basic Info.

Model NO.
IRF7313TRPBF
MFG.
INFINEON
D/C
17+
Package
SOIC-8
Quality
Genuine New Original
Transport Package
Box
Origin
China
HS Code
8542390000
Production Capacity
1000000PCS

Product Description

Description

IRF7313TRPBF: Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC T/R

Package: SOIC-8

Mfr. Part#: IRF7313TRPBF

Mfr.: INFINEON
Datasheet: Trans MOSFET N-CH 30V IRF7313TRPBF(e-mail or chat us for PDF file)

ROHS Status: Trans MOSFET N-CH 30V IRF7313TRPBF

Quality: 100% Original

Warranty: 180 days
 

Product Status
Obsolete
 
Technology
MOSFET (Metal Oxide)
 
Configuration
2 N-Channel (Dual)
 
FET Feature
-
 
Drain to Source Voltage (Vdss)
30V
 
Current - Continuous Drain (Id) @ 25°C
6.5A
 
Rds On (Max) @ Id, Vgs
29mOhm @ 5.8A, 10V
 
Vgs(th) (Max) @ Id
1V @ 250µA
 
Gate Charge (Qg) (Max) @ Vgs
33nC @ 10V
 
Input Capacitance (Ciss) (Max) @ Vds
650pF @ 25V
 
Power - Max
2W
 
Operating Temperature
-55°C ~ 150°C (TJ)
 
Mounting Type
Surface Mount
 
Package / Case
8-SOIC (0.154", 3.90mm Width)
 
Supplier Device Package
8-SO
 
Base Product Number
IRF731



 

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.

Key Features

  • Generation V Technology
  • Ultra Low On-Resistance
  • Dual N Channel Mosfet
  • Surface Mount
  • Fully Avalanche Rated

Company Product Line


Trans MOSFET N-CH 30V IRF7313TRPBF







 


Trans MOSFET N-CH 30V IRF7313TRPBF


Trans MOSFET N-CH 30V IRF7313TRPBF

Trans MOSFET N-CH 30V IRF7313TRPBF


Trans MOSFET N-CH 30V IRF7313TRPBF

Trans MOSFET N-CH 30V IRF7313TRPBF


Certificates

Trans MOSFET N-CH 30V IRF7313TRPBF

Product Packing details

Trans MOSFET N-CH 30V IRF7313TRPBF



Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

Notice:

  1. Product images are for reference only.
  2. You can contact sales person to apply for a better price.
  3.  For more products, Pls do not hesitate to contact our Sales team.   
 

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Trading Company
Registered Capital
100000 RMB
Plant Area
<100 square meters