K4A4G165WF-BCTD DRAM Chip DDR4 SDRAM 4Gbit 256Mx16 1.2V FBGA96

• Customization: Available
• Conductive Type: Bipolar Integrated Circuit
• Integration: MSI
• Model NO.: K4A4G165WF-BCTD
• Technics: Semiconductor IC
• MFG.: new original
• D/C: 22+
• Package: FBGA96
• Quality: Genuine New Original
• shape: hqfp64
• Transport Package: Box
• Origin: China
• HS Code: 8542399000
• Production Capacity: 1000000PCS

Product Description

Description

K4A4G165WF-BCTD: DRAM Chip DDR4 SDRAM 4Gbit 256Mx16 1.2V 96-Pin FBGA

Mfr. Part#: K4A4G165WF-BCTD

Mfr.: 

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: ONE YEAR

 

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8542.32.00.36
Automotive	No
PPAP	No
DRAM Type	DDR4 SDRAM
Chip Density (bit)	4G
Organization	256Mx16
Number of Internal Banks	16
Number of Words per Bank	16M
Number of Bits/Word (bit)	16
Data Bus Width (bit)	16
Maximum Clock Rate (MHz)	2666
Interface Type	POD
Minimum Operating Temperature (°C)	0
Maximum Operating Temperature (°C)	85
Supplier Temperature Grade	Commercial
Number of I/O Lines (bit)	16
Mounting	Surface Mount
Package Height	0.98(Max)
Package Width	10.3
Package Length	13.3
PCB changed	96
Standard Package Name	BGA
Supplier Package	FBGA
Pin Count	96
Lead Shape	Ball

 

The 4Gb DDR4 SDRAM F-die is organized as a 32Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 3200Mb/sec/pin (DDR4-3200) for general applications. The chip is designed to comply with the following key DDR4 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style. The DDR4 device operates with a single 1.2V (1.14V~1.26V) power supply, 1.2V(1.14V~1.26V) VDDQ and 2.5V (2.375V~2.75V) VPP. The 4Gb DDR4 F-die device is available in 96ball FBGAs(x16).

 

 

Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

Notice:

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