IC 4MBIT IS61WV25616BLL-10TLI SRAM Chip Async Single 2.5V/3.3V

• Customization: Available
• Conductive Type: Unipolar Integrated Circuit
• Integration: MSI
• Model NO.: IS61WV25616BLL-10TLI
• Technics: Thin Film IC
• MFG.: ISSI
• D/C: 17+
• Package: TSOP(II)-44
• Quality: Genuine New Original
• shape: SMD
• Transport Package: Box
• Origin: China
• HS Code: 8542390000
• Production Capacity: 1000000PCS

Product Description

Description

IS61WV25616BLL-10TLI: SRAM Chip Async Single 2.5V/3.3V 4M-Bit 256K x 16 10ns 44-Pin TSOP-II

Package: TSOP(II)-44

Mfr. Part#: IS61WV25616BLL-10TLI

Mfr.: ISSI

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: 180 days
 

Memory Size:	4 Mbit
Organization:	256 k x 16
Access Time:	10 ns
Maximum Clock Frequency:	-
Interface Type:	Parallel
Supply Voltage - Max:	3.6 V
Supply Voltage - Min:	2.4 V
Supply Current - Max:	45 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Mounting Style:	SMD/SMT
Package / Case:	TSOP-44
Packaging:	Tray
Brand:	ISSI
Data Rate:	SDR
Memory Type:	SDR
Moisture Sensitive:	Yes
Number of Ports:	1
Product Type:	SRAM
Series:	IS61WV25616BLL
Factory Pack Quantity:	135
Subcategory:	Memory & Data Storage
Type:	Asynchronous
Unit Weight:	0.016579 oz

 

The ISSI IS61WV25616BLLis high-speed, 4,194,304-bit static RAMs organized as262,144 words by 16 bits. It is fabricated using ISSI's highperformanceCMOStechnology.Thishighlyreliableprocesscoupled with innovative circuit design techniques, yieldshigh-performance and low power consumption devices.When CE\ is HIGH (deselected), the device assumes astandby mode at which the power dissipation can be reduceddown with CMOS input levels. Easy memory expansion is provided by using Chip Enableand Output Enable inputs, CE\ and OE\. The active LOWWrite Enable (WE)\ controls both writing and reading of thememory. A data byte allows Upper Byte (UB)\ and LowerByte (LB)\ access. The IS61WV25616BLL ispackaged in the JEDEC standard 44-pin 400mil SOJ,44-pin TSOP Type II and 48-pin Mini BGA (6mm x 8mm).

Key Features

• High-speed access time: 8, 10, 20 ns
• Low Active Power: 85 mW (typical)
• Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS)
• High-speed access time: 25, 35, 45 ns
• Low Active Power: 35 mW (typical)
• Low Standby Power: 0.6 mW (typical) CMOS standby
• Single power supply
  • Vdd 1.65V to 2.2V (IS61WV25616Axx)
  • Vdd 2.4V to 3.6V (IS61/64WV25616Bxx)
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial and Automotive temperature support
• Lead-free available

Company Product Line

 

Certificates



Product Packing details

Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

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