| Customization: | Available |
|---|---|
| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | MSI |
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MB85RC16VPNF-G-JNN1ERE1: FRAM (Ferroelectric RAM) Memory IC 16Kbit I²C 1 MHz 550 ns 8-SOP
Mfr. Part#: MB85RC16VPNF-G-JNN1ERE1
Mfr.: FUJITSU
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
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Memory Type
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Non-Volatile
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Memory Format
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FRAM
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Technology
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FRAM (Ferroelectric RAM)
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Memory Size
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16Kbit
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Memory Organization
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2K x 8
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Memory Interface
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I²C
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Clock Frequency
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1 MHz
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Write Cycle Time - Word, Page
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-
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Access Time
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550 ns
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Voltage - Supply
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3V ~ 5.5V
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Operating Temperature
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-40°C ~ 85°C (TA)
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Mounting Type
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Surface Mount
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Package / Case
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8-SOIC (0.154", 3.90mm Width)
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Supplier Device Package
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8-SOP
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Base Product Number
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MB85RC16
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The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data without using a data backup battery. The memory cells used in the MB85RC16V have at least 1012 Read/Write operation endurance per byte, which is a significant improvement over the number of read and write operations supported by other nonvolatile memory products. The MB85RC16V can provide writing in one byte units because the long writing time is not required unlike Flash memory and E2PROM. Therefore, the writing completion waiting sequence like a write busy state is not required.
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