| shape: | SMD |
|---|---|
| Conductive Type: | Unipolar Integrated Circuit |
| Integration: | MSI |
| Technics: | Thin Film IC |
| Application: | Standard Generalized Integrated Circuit |
| Type: | Digital / Analog IC |
| Customization: |
|---|
Suppliers with verified business licenses
Audited Supplier IS42S16400J-7TLI-TR: DRAMs Parts and Modules - Tape and Reel
Package: TSOP(II)-54
Mfr. Part#: IS42S16400J-7TLI-TR
Mfr.: ISSI
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: 180 days
| Type: | SDRAM | |
| Mounting Style: | SMD/SMT | |
| Package / Case: | TSOP-54 | |
| Data Bus Width: | 16 bit | |
| Organization: | 4 M x 16 | |
| Memory Size: | 64 Mbit | |
| Maximum Clock Frequency: | 143 MHz | |
| Access Time: | 5.4 ns | |
| Supply Voltage - Max: | 3.6 V | |
| Supply Voltage - Min: | 3 V | |
| Supply Current - Max: | 90 mA | |
| Minimum Operating Temperature: | - 40 C | |
| Maximum Operating Temperature: | + 85 C | |
| Series: | IS42S16400J | |
| Packaging: | Reel | |
| Packaging: | Cut Tape | |
| Packaging: | MouseReel | |
| Brand: | ISSI | |
| Moisture Sensitive: | Yes | |
| Product Type: | DRAM | |
| Factory Pack Quantity: | 1500 | |
| Subcategory: | Memory & Data Storage | |
| Unit Weight: | 0.019083 oz |
The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 4,096 rows by 256 columns by 16 bits. The 64Mb SDRAM includes an AUTO REFRESH MODE, and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible. The 64Mb SDRAM has the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide precharge time and the capability to randomly change column addresses on each clock cycle during burst access. A self-timed row precharge initiated at the end of the burst sequence is available with the AUTO PRECHARGE function enabled. Precharge one bank while accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed, random-access operation. SDRAM read and write accesses are burst oriented starting at a selected location and continuing for a programmed number of locations in a programmed sequence. The registration of an ACTIVE command begins accesses, followed by a READ or WRITE command. The ACTIVE command in conjunction with address bits registered are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0-A11 select the row). The READ or WRITE commands in conjunction with address bits registered are used to select the starting column location for the burst access. Programmable READ or WRITE burst lengths consist of 1, 2, 4 and 8 locations, or full page, with a burst terminate option.
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