• IKW40N120T2 K40T1202 Transistor IGBT Chip
  • IKW40N120T2 K40T1202 Transistor IGBT Chip
  • IKW40N120T2 K40T1202 Transistor IGBT Chip
  • IKW40N120T2 K40T1202 Transistor IGBT Chip
  • IKW40N120T2 K40T1202 Transistor IGBT Chip
  • IKW40N120T2 K40T1202 Transistor IGBT Chip

IKW40N120T2 K40T1202 Transistor IGBT Chip

shape: SMD
Conductive Type: Bipolar Integrated Circuit
Integration: SSI
Technics: Semiconductor IC
Application: Standard Generalized Integrated Circuit
Type: Digital IC
Samples:
US$ 15/Piece 1 Piece(Min.Order)
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Customization:
Diamond Member Since 2018

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Basic Info.

Model NO.
IKW40N120T2
MFG.
INFINEON
Quality
Genuine New Original
Package
TO-247
D/C
18+
Transport Package
Box
Specification
integrated circuit
Origin
China
HS Code
8542390000
Production Capacity
1000000PCS

Product Description

Description

IKW40N120T2:  IGBT Transistors LOW LOSS DuoPack 1200V 40A

Package: TO-247

Mfr. Part#: IKW40N120T2

Mfr.: INFINEON

Datasheet: IKW40N120T2 K40T1202 Transistor IGBT Chip(e-mail or chat us for PDF file)

ROHS Status: IKW40N120T2 K40T1202 Transistor IGBT Chip

Quality: 100% Original

Warranty: 180 days
 

 

Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Key Features

  • Lowest V ce(sat) drop for lower conduction losses
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution


 
Part Status Active
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 75A
Current - Collector Pulsed (Icm) 160A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 40A
Power - Max 480W
Switching Energy 5.25mJ
Input Type Standard
Gate Charge 192nC
Td (on/off) @ 25°C 33ns/314ns
Test Condition 600V, 40A, 12Ohm, 15V
Reverse Recovery Time (trr) 258ns
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3
 

Company Product Line


IKW40N120T2 K40T1202 Transistor IGBT Chip







 


IKW40N120T2 K40T1202 Transistor IGBT Chip


IKW40N120T2 K40T1202 Transistor IGBT Chip

IKW40N120T2 K40T1202 Transistor IGBT Chip


IKW40N120T2 K40T1202 Transistor IGBT Chip

IKW40N120T2 K40T1202 Transistor IGBT Chip


Certificates

IKW40N120T2 K40T1202 Transistor IGBT Chip

IKW40N120T2 K40T1202 Transistor IGBT Chip
 


 

 

Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

Notice:

  1. Product images are for reference only.
  2. You can contact sales person to apply for a better price.
  3.  For more products, Pls do not hesitate to contact our Sales team.   

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Diamond Member Since 2018

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Trading Company
Registered Capital
100000 RMB
Plant Area
<100 square meters