| Customization: | Available |
|---|---|
| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | MSI |
|
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IRLR024NTRPBF: N-Channel 55 V 17A (Tc) 45W (Tc) Surface Mount D-Pak
Mfr. Part#: IRLR024NTRPBF
Mfr.: INFINEON
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
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Product Status
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Active
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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55 V
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Current - Continuous Drain (Id) @ 25°C
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17A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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4V, 10V
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Rds On (Max) @ Id, Vgs
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65mOhm @ 10A, 10V
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Vgs(th) (Max) @ Id
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2V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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15 nC @ 5 V
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Vgs (Max)
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±16V
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Input Capacitance (Ciss) (Max) @ Vds
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480 pF @ 25 V
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FET Feature
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-
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Power Dissipation (Max)
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45W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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D-Pak
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Package / Case
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TO-252-3, DPak (2 Leads + Tab), SC-63
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Base Product Number
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IRLR024
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Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
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