TK10A80E,S4X MOSFET N-CH 800V 10A TO220SIS

• Customization: Available
• Conductive Type: Bipolar Integrated Circuit
• Integration: MSI
• Model NO.: TK10A80E,S4X
• Technics: Semiconductor IC
• MFG.: TOSHIBA
• D/C: 22+
• Package: TO-220SIS
• Quality: Genuine New Original
• shape: Flat
• Transport Package: Box
• Origin: China
• HS Code: 8542399000
• Production Capacity: 1000000PCS

Product Description

Description

TK10A80E,S4X : N-Channel 800 V 10A (Ta) 50W (Tc) Through Hole TO-220SIS

Mfr. Part#:   TK10A80E,S4X

Mfr.: TOSHIBA

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: ONE YEAR

 

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	50W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TK10A80

Applications • Switching Voltage Regulators

Features (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

 

Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

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