| Customization: | Available |
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| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | MSI |
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W9825G6KH-6I: SDRAM Memory IC 256Mbit Parallel 166 MHz 5 ns 54-TSOP II
Mfr. Part#: W9825G6KH-6I
Mfr.: WINBOND
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
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Product Status
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Active
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Memory Type
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Volatile
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Memory Format
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DRAM
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Technology
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SDRAM
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Memory Size
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256Mbit
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Memory Organization
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16M x 16
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Memory Interface
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Parallel
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Clock Frequency
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166 MHz
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Write Cycle Time - Word, Page
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-
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Access Time
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5 ns
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Voltage - Supply
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3V ~ 3.6V
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Operating Temperature
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-40°C ~ 85°C (TA)
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Mounting Type
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Surface Mount
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Package / Case
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54-TSOP (0.400", 10.16mm Width)
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Supplier Device Package
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54-TSOP II
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Base Product Number
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W9825G6
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W9825G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words x 4 banks x 16 bits. W9825G6KH delivers a data bandwidth of up to 200M words per second. To fully comply with the personal computer industrial standard, W9825G6KH is sorted into the following speed grades: -5, -5I, -6, -6I, -6J, -6L, -75, 75J and 75L. The -5/-5I grade parts are compliant to the 200MHz/CL3 specification (the -5I industrial grade which is guaranteed to support -40°C ≤ TA ≤ 85°C). The -6/-6I/-6J/-6L grade parts are compliant to the 166MHz/CL3 specification (the -6I industrial grade which is guaranteed to support -40°C ≤ TA ≤ 85°C, the -6J industrial plus grade which is guaranteed to support -40°C ≤ TA ≤ 105°C). The -75/75J/75L grade parts are compliant to the 133MHz/CL3 specification (the 75J industrial plus grade which is guaranteed to support -40°C ≤ TA ≤ 105°C). The -6L and 75L grade parts support self refresh current IDD6 max. 1.5 mA. Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time. By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9825G6KH is ideal for main memory in high performance applications.
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