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| Customization: | Available |
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| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | MSI |
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CUS08F30,H3F: Diode 30 V 800mA Surface Mount USC
Mfr. Part#: CUS08F30,H3F
Mfr.: TOSHIBA
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
| Product: | Schottky Diodes |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOD-323-2 |
| Configuration: | Single |
| Technology: | Si |
| If - Forward Current: | 800 mA |
| Vrrm - Repetitive Reverse Voltage: | 30 V |
| Vf - Forward Voltage: | 400 mV |
| Ifsm - Forward Surge Current: | 5 A |
| Ir - Reverse Current: | 50 uA |
| Maximum Operating Temperature: | + 125 C |
| Series: | CUS08F30 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | Toshiba |
| Product Type: | Schottky Diodes & Rectifiers |
| Factory Pack Quantity: | 3000 |
| Subcategory: | Diodes & Rectifiers |
| Vr - Reverse Voltage: | 30 V |
| Unit Weight: | 0.000353 oz |
Applications • High-Speed Switching
Features (1) Low forward voltage: VF(3) = 0.40 V (typ.) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages.
Usage Considerations • Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design.
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