IC USB analog SWITCH TS3USB30ERSWR

• Customization: Available
• Conductive Type: Unipolar Integrated Circuit
• Integration: ULSI
• Model NO.: TS3USB30ERSWR
• Technics: Thin Film IC
• MFG.: TI
• D/C: 17+
• Package: UQFN-10
• Quality: Genuine New Original
• shape: SMD
• Transport Package: Box
• Origin: China
• HS Code: 8542390000
• Production Capacity: 1000000PCS

Product Description

Description

TS3USB30ERSWR: Analog Switch Dual SPDT 10-Pin UQFN T/R - Tape and Reel

Package: UQFN-10

Mfr. Part#: TS3USB30ERSWR

Mfr.: TI
Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: 180 days
 

Product Status	Active
Applications	USB
Multiplexer/Demultiplexer Circuit	-
Switch Circuit	DPDT
Number of Channels	1
On-State Resistance (Max)	10Ohm
Voltage - Supply, Single (V+)	3V ~ 4.3V
Voltage - Supply, Dual (V±)	-
-3db Bandwidth	900MHz
Features	Bi-Directional, USB 2.0
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	10-UFQFN
Supplier Device Package	10-UQFN (1.8x1.4)
Base Product Number	TS3USB30

 

The TS3USB30E is a high-bandwidth switch specially designed for the switching of high-speed USB 2.0 signals in handset and consumer applications, such as cell phones, digital cameras, and notebooks with hubs or controllers with limited USB I/Os. The wide bandwidth (900 MHz) of this switch allows signals to pass with minimum edge and phase distortion. The device multiplexes differential outputs from a USB host device to one of two corresponding outputs. The switch is bidirectional and offers little or no attenuation of the high-speed signals at the outputs. It is designed for low bit-to-bit skew and high channel-to-channel noise isolation, and is compatible with various standards, such as high-speed USB 2.0 (480 Mbps).

The TS3USB30E integrates ESD protection cells on all pins, is available in a tiny µQFN package (1.8 mm × 1.4 mm), a DGS package, and is characterized over the free air temperature range of -40°C to 85°C.

 

Key Features

• V_CC Operation at 3 V to 4.3 V
• 1.8-V Compatible Control-Pin Inputs
• I_OFF Supports Partial Power-Down-Mode Operation
  • D+/D- Pins Tolerate up to 5.25V
• r_ON = 10 Ω Max
• Δ_ON = 0.35 Ω Typ
• C_io(ON) = 7.5 pF Typ
• Low Power Consumption (1 µA Max)
• -3 dB Bandwidth = 900 MHz Typ
• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II⁽¹⁾
• ESD Performance Tested Per JESD 22
• 8000-V Human-Body Model (A114-B, Class II)
• 1000-V Charged-Device Model (C101)
• ESD Performance I/O Port to GND⁽²⁾
• 15000-V Human-Body Model
• Packaged in 10-pin TQFN (1.4 mm × 1.8 mm)

 

Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

Notice:

1. Product images are for reference only.
2. You can contact sales person to apply for a better price.
3.  For more products, Pls do not hesitate to contact our Sales team.