| Customization: | Available |
|---|---|
| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | MSI |
|
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IRF5210PBF: P-Channel 100 V 40A (Tc) 200W (Tc) Through Hole TO-220AB
Mfr. Part#: IRF5210PBF
Mfr.: INFINEON
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
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Package
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Tube
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Product Status
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Active
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FET Type
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P-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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100 V
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Current - Continuous Drain (Id) @ 25°C
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40A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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60mOhm @ 24A, 10V
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Vgs(th) (Max) @ Id
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4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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180 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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2700 pF @ 25 V
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FET Feature
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-
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Power Dissipation (Max)
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200W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Through Hole
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Supplier Device Package
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TO-220AB
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Package / Case
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TO-220-3
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Base Product Number
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IRF5210
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Features • Floating channel designed for bootstrap operation • Fully operational to +600 V • Tolerant to negative transient voltage, dV/dt immune • Low VCC operation • Gate drive supply range from 6.8 V to 20 V • Undervoltage lockout for both channels • 3.3V and 5V input logic compatible • Matched propagation delay for both channels • Logic and power ground +/- 5 V offset • Lower di/dt gate driver for better noise immunity • Output source/sink current capability 4.0 A (Typ.) • Leadfree, RoHS compliant
Applications • Battery powered equipment • Hand-tools • Fork-lifts • Golf-carts • RC Hobby Equipment • E-bike
Notice:
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