SI2318CDS-T1-GE3 SI2318CDS trans mosfet transistor

• Certification: RoHS, CE, CCC
• Encapsulation Structure: Chip Transistor
• Installation: SMD Triode
• Working Frequency: Low Frequency
• Power Level: Medium Power
• Function: Power Triode, Switching Triode
• Model NO.: SI2318CDS-T1-GE3
• Structure: Diffusion
• Material: Silicon
• MFG.: VISHAY
• Quality: Genuine New Original
• Package: SOT-23
• D/C: 18+
• Transport Package: Box
• Specification: integrated circuit
• Origin: China
• HS Code: 8542390000
• Production Capacity: 1000000PCS

Product Description

Description

SI2318CDS-T1-GE3:  Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R - Tape and Reel 

Package: SOT-23

Mfr. Part#: SI2318CDS-T1-GE3

Mfr.: VISHAY

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: 180 days
 

 

Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	42 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	340pF @ 20V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 2.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

 

 

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• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
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