| Customization: | Available |
|---|---|
| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | MSI |
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MB85RS256BPNF-G-JNERE1: FRAM (Ferroelectric RAM) Memory IC 256Kbit SPI 33 MHz 8-SOP
Mfr. Part#: MB85RS256BPNF-G-JNERE1
Mfr.: FUJITSU
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
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Memory Type
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Non-Volatile
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Memory Format
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FRAM
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Technology
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FRAM (Ferroelectric RAM)
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Memory Size
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256Kbit
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Memory Organization
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32K x 8
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Memory Interface
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SPI
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Clock Frequency
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33 MHz
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Write Cycle Time - Word, Page
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-
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Voltage - Supply
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2.7V ~ 3.6V
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Operating Temperature
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-40°C ~ 85°C (TA)
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Mounting Type
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Surface Mount
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Package / Case
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8-SOIC (0.154", 3.90mm Width)
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Supplier Device Package
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8-SOP
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Base Product Number
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MB85RS256
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MB85RS256B is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words X 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS256B adopts the Serial Peripheral Interface (SPI). The MB85RS256B is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS256B can be used for 1012 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RS256B does not take long time to write data like Flash memories or E2PROM, and MB85RS256B takes no wait time.
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