IPW60R099C6 Trans MOSFET N-Ch 650V 38A TO247-3

• Certification: RoHS, CE
• Encapsulation Structure: Chip Transistor
• Installation: SMD Triode
• Working Frequency: High Frequency
• Power Level: High Power
• Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode
• Model NO.: IPW60R099C6
• Structure: NPN
• Material: Silicon
• MFG.: INFINEON
• D/C: 22+
• Package: TO-247
• Quality: Genuine New Original
• Product status: Active
• Transport Package: Box
• Specification: electronic components
• Origin: China
• HS Code: 8542399000
• Production Capacity: 1000000PCS

Product Description

description

IPW60R099C6 :  MOSFET N-Ch 600V 37.9A CoolMOS TO247

Mfr. Part#: IPW60R099C6

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: ONE YEAR
 

Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	37.9 A
Rds On - Drain-Source Resistance:	90 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	119 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	278 W
Channel Mode:	Enhancement
Tradename:	CoolMOS
Series:	CoolMOS C6
Packaging:	Tube
Configuration:	Single
Fall Time:	6 ns
Height:	21.1 mm
Length:	16.13 mm
Product Type:	MOSFET
Rise Time:	12 ns
Factory Pack Quantity:	240
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	75 ns
Typical Turn-On Delay Time:	15 ns
Width:	5.21 mm
Part # Aliases:	IPW6R99C6XK SP000641908 IPW60R099C6FKSA1
Unit Weight:	0.211644 oz

DESCRIPTION
 

CoolMOS C6 combines Infineon's experience as the leading Superjunction MOSFET supplier with Best-in-Class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.

Key Features

• Easy control of switching behavior
• Extremely low losses due to very low Figure of Merit (R DS(ON)* Q gand E oss)
• Very high commutation ruggedness
• Easy to use
• Better light load efficiency compared to C3
• Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
• Better price performance in comparison to previous CoolMOS™ generations
• More efficient, more compact, lighter and cooler

  

 

APPIications
PFC stages,hard switching PWM stages and resonant switching
PWM  stages for  e.g.  PC  Silverbox,Adapter,LCD  &  PDP  Tv,
Lighting,Server,Telecom and UPS.


Please note: For MOSFET paralleling the use of ferrite beads on
the gate or separate totem poles is generally recommended.
 

 

 

 

 

 

 

Certificates







Product Packing details

Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

Notice:

1. Product images are for reference only.
2. You can contact sales person to apply for a better price.
3.  For more products inquiry, Pls do not hesitate to contact our Sales team.